TITLE

Delta-doped AlGaAs and AlGaAs/InGaAs high electron mobility transistor structures grown by

AUTHOR(S)
Yang, G.M.; Park, S.G.
PUB. DATE
May 1992
SOURCE
Applied Physics Letters;5/11/1992, Vol. 60 Issue 19, p2380
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the delta-doped aluminum gallium arsenide and aluminum gallium arsenide/indium gallium arsenide high electron mobility transistor structures grown by chemical vapor deposition (CVD). Calculation of capacitance-voltage profiles of delta-doped structures; Growth temperature for CVD; Values of the Hall mobility.
ACCESSION #
4227370

 

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