Incorporation of silicon and aluminum in low temperature molecular beam epitaxial GaAs

Manasreh, M.O.; Evans, K.R.
May 1992
Applied Physics Letters;5/11/1992, Vol. 60 Issue 19, p2377
Academic Journal
Examines the localized vibrational modes (LVM) of silicon donor and aluminum isovalent impurities in low temperature molecular beam epitaxial gallium arsenide layers. Use of the infrared absorption technique; Relation between the total integrated absorption of LVM and growth temperature; Effect of silicon-doped sample annealing on Si[sub Ga].


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