Growth of InGaAs/InP optical modulator structures by chemical beam epitaxy

Chiu, T.H.; Goossen, K.W.
May 1992
Applied Physics Letters;5/11/1992, Vol. 60 Issue 19, p2365
Academic Journal
Investigates the growth of indium gallium arsenide/indium phosphide optical modulator structures by chemical beam epitaxy. Factors affecting the alloy composition and the quantum well period length; Application of secondary ion mass spectroscopy; Observation of clear quantum Stark effect in a 74-period modulator.


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