TITLE

Growth of GaAs/ErAs/GaAs structures by migration-enhanced epitaxy

AUTHOR(S)
Yamaguchi, Hiroshi; Horikoshi, Yoshiji
PUB. DATE
May 1992
SOURCE
Applied Physics Letters;5/11/1992, Vol. 60 Issue 19, p2341
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the fabrication of gallium arsenide (GaAs)/erbium arsenide (ErAs)/gallium arsenide structures by migration-enhanced epitaxy. Application of X-ray diffraction analysis and transmission electron microscopy; Observation of satellite peaks on X-ray rocking curve of an ErAs/GaAs superlattice; Use of a (001)-oriented GaAs substrate.
ACCESSION #
4227357

 

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