Realization of a field-effect resonant tunneling transistor at room temperature: Observation of

Yang, C.H.
March 1992
Applied Physics Letters;3/9/1992, Vol. 60 Issue 10, p1250
Academic Journal
Demonstrates a field-effect resonant tunneling transistor at room temperature. Occurrence of a negative transconductance and power gain; Modulation of the resonant tunneling probability between terminals; Information on the epitaxial growth of the heterostructure; Application of the fabrication process to make contacts with the quantum well drains.


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