Direct determination of the valence-band offsets at Ga[sub 0.47]In[sub 0.53]As/InP and

Landesman, J.P.; Garcia, J.C.
March 1992
Applied Physics Letters;3/9/1992, Vol. 60 Issue 10, p1241
Academic Journal
Examines the valence-band offsets at gallium indium arsenide (GaInAs)/indium phosphide (InP) and InP/GaInAs heterostructures grown by molecular beam epitaxy. Attribution of band-offset asymmetry to a difference in the chemical nature of the interfaces; Analysis of the core-level spectra; Growth rates of the heterostructures.


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