Oxidation induced AlAs/GaAs superlattice disordering

Chang, J.C.P.; Kavanagh, K.L.
March 1992
Applied Physics Letters;3/9/1992, Vol. 60 Issue 10, p1235
Academic Journal
Examines the occurrence of rapid interdiffusion at thin film interfaces. Diffusion of germanium and silicon after oxidation; Detection of negligible diffusion in forming gas; Correlation among dissociation, out-diffusion, and oxidation of the gallium arsenide substrates.


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