TITLE

Fluorine ion induced enhancement of oxide removal prior to silicon epitaxial growth

AUTHOR(S)
Jen-Chung Lou; Oldham, William G.
PUB. DATE
March 1992
SOURCE
Applied Physics Letters;3/9/1992, Vol. 60 Issue 10, p1232
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the low-temperature epitaxial growth of silicon using a dichlorosilane-hydrogen mixture in a hot-wall reactor. Removal of the native or chemical surface oxide layers; Difference between implanted and unimplanted regions; Enhancement of the surface oxide removal in the implanted area.
ACCESSION #
4227338

 

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