High temperature thermally stable implant isolation for GaAs via void formation

Kei-Yu Ko; Chen, Samuel
March 1992
Applied Physics Letters;3/9/1992, Vol. 60 Issue 10, p1223
Academic Journal
Develops a method of forming thermally stable high-resistivity regions for device isolation in gallium arsenide. Increase in sheet resistivity of Al[sup +]-implanted epitaxial layer structures; Correlation between resistivity and voids; Ineffectiveness of isolation at high temperatures; Stability of voids at high temperatures.


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