Shallow, titanium-silicided p[sup +]n junction formation by triple germanium amorphization

Dehm, Christine; Gyulai, J.
March 1992
Applied Physics Letters;3/9/1992, Vol. 60 Issue 10, p1214
Academic Journal
Develops titanium silicide contacts using self-aligned silicidation technology by ion-beam mixing with germanium. Formation of shallow p[sup +]n junctions; Implantation of boron in silicided silicon substrates; Reduction of end-of-range defect concentration; Improvement of electrical characteristics of the contacts.


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