TITLE

Shallow, titanium-silicided p[sup +]n junction formation by triple germanium amorphization

AUTHOR(S)
Dehm, Christine; Gyulai, J.
PUB. DATE
March 1992
SOURCE
Applied Physics Letters;3/9/1992, Vol. 60 Issue 10, p1214
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Develops titanium silicide contacts using self-aligned silicidation technology by ion-beam mixing with germanium. Formation of shallow p[sup +]n junctions; Implantation of boron in silicided silicon substrates; Reduction of end-of-range defect concentration; Improvement of electrical characteristics of the contacts.
ACCESSION #
4227332

 

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