TITLE

Thermally activated dopant diffusion in crystalline silicon at 200 degrees C?

AUTHOR(S)
Pichler, P.; Orlowski, M.
PUB. DATE
March 1992
SOURCE
Applied Physics Letters;3/9/1992, Vol. 60 Issue 10, p1205
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Evaluates the anomalous asymmetric diffusion of dopants in silicon during silicidation at low temperature. Presentation of Fickian-type diffusion theories; Analysis of the asymmetric diffusion structures; Existence of the inhomogeneous stress field; Description of asymmetric profile broadening.
ACCESSION #
4227329

 

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