Kinetic diffusion model of ion-implanted boron during rapid thermal annealing

Kinoshita, H.; Kwong, D.L.
March 1992
Applied Physics Letters;3/9/1992, Vol. 60 Issue 10, p1202
Academic Journal
Evaluates the physical diffusion model of ion-implanted boron during rapid thermal annealing. Examination of the reaction kinetics of boron, silicon self-interstitials, and vacancies in multiple-charge states; Effects of ion-implant damage on boron diffusion; Achievement of the accurate diffusion modelling.


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