TITLE

Mechanical strength of silicon crystals with oxygen and/or germanium impurities

AUTHOR(S)
Fukuda, Tetsuo; Ohsawa, Akira
PUB. DATE
March 1992
SOURCE
Applied Physics Letters;3/9/1992, Vol. 60 Issue 10, p1184
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the mechanical strength of epitaxial and Czochralski (CZ) silicon crystals with germanium concentrations using an indentation test. Increase of the strength of CZ crystals for germanium concentration; Description of CZ crystal alloyed with germanium; Occupation of oxygen atoms in the interstitial sites next to the germanium atoms.
ACCESSION #
4227322

 

Related Articles

  • Liquid-metal-mediated homoepitaxial film growth of Ge at low temperature. Fulin Xiong; Ganz, Eric; Loeser, A.G.; Golovchenko, J.A.; Spaepen, Frans // Applied Physics Letters;12/30/1991, Vol. 59 Issue 27, p3586 

    Examines the liquid-metal-mediated homoepitaxial film growth of germanium (Ge) at low temperature. Impact of the vapor-liquid-solid (VLS) mechanism in silicon crystal growth; Importance of selective chemical etching in removing the surface gold after VLS growth; Use of a cross sectional...

  • Positioning of self-assembled, single-crystal, germanium islands by silicon nanoimprinting. Kamins, T.I.; Ohlberg, D.A.A. // Applied Physics Letters;3/22/1999, Vol. 74 Issue 12, p1773 

    Studies the positioning of self-assembled, single-crystal germanium islands by silicon nanoimprinting. Advantages of combining patterning with self-assembled island formation; Pattern capabilities of nanoimprinting.

  • Enhanced formation of thermal donors in irradiated germanium: local vibrational mode spectroscopy. Klechko, A. A.; Litvinov, V. V.; Markevich, V. P.; Murin, L. I. // Semiconductors;Nov99, Vol. 33 Issue 11, p1163 

    Oxygen-rich Ge samples were bombarded with fast electrons (E = 4 MeV) at 80 �C and subjected to isochronal (100-340�C) and isothermal (350 �C) annealing. Infrared absorption spectra were measured at room temperature. Preliminary irradiation of the samples is found to strongly...

  • Fabrication of patterned Ge[sub x]Si[sub 1-x]/Si layers by pulsed laser induced epitaxy. Chang, Y.; Chou, S.Y.; Kramer, J.; Sigmon, T.W.; Marshall, A.F.; Weiner, K.H. // Applied Physics Letters;5/13/1991, Vol. 58 Issue 19, p2150 

    Demonstrates selective growth of Ge[sub x]Si[sub 1-x] using a pulsed laser induced epitaxy (PLIE) technique, combined with either standard oxide or liftoff patterning processes. Semiconductor patterning techniques implemented; Process steps; Well configuration resulting from PLIE processing;...

  • Characterization of the interface between Ge+-implanted crystalline silicon and its thermally grown oxide by spectroscopic ellipsometry. Nguyen, N. V.; Vedam, K.; Narayan, J. // Journal of Applied Physics;1/15/1990, Vol. 67 Issue 2, p599 

    Studies a series of virgin and germanium-implanted crystalline silicon samples using spectroscopic ellipsometry. Effects of the implantation of germanium ions into crystalline silicon; Details on the experiment; Discussion and results of the study.

  • Room-temperature vacancy migration in crystalline Si from a ion-implanted surface layer. Larsen, Arne Nylandsted; Christensen, Carsten // Journal of Applied Physics;11/1/1999, Vol. 86 Issue 9, p4861 

    Presents information on a study which demonstrated the migration of vacancies in crystalline silicon from germanium-implanted surface layers. Experimental procedure; Results and discussion; Conclusions.

  • Mass Transfer in Non-Steady-State Hydride Epitaxy of Si[sub 1 — ][sub x]Ge[sub x]/Si Structures. Orlov, L. K.; Ivin, S. V.; Potapov, A. V.; Ivina, N. L. // Technical Physics;Apr2001, Vol. 46 Issue 4, p417 

    Numerical simulation of the non-steady-state kinetics for the solid solutions MBE-grown from silane and germane with vapor sources was carried out. The smearing of the germanium distribution at the interfaces in the Si[sub 1-x]Ge[sub x]/Si structures was studied both in the absence of the atomic...

  • Comments on the use of asymmetric monochromators for x-ray diffraction on a synchrotron source. Nave, Colin; Gonzalez, Ana; Clark, Graham; McSweeney, Sean; Cummings, Stewart; Hart, Michael // Review of Scientific Instruments;Feb1995, Vol. 66 Issue 2, p2174 

    Discusses the use of asymmetrically cut germanium or silicon crystals to provide monochromatic radiation on synchrotron radiation beamlines. Single crystal focusing monochromators; Possibility of rapidly changing the wavelength with minimal change in the position of the diffracted beam in...

  • Influence of technological parameters on the behavior of the hole effective mass in SiGe structures. Rodriguez, Salvador // Journal of Applied Physics;8/15/2000, Vol. 88 Issue 4, p1978 

    Examines the influence of technological parameters on the behavior of the hole effective mass in silicon germanium structures. Evaluation of the Poisson and Schrodinger equations; Factors explaining the improvement of hole mobility; Calculation of the carrier profile and unique effective mass.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics