Activation and diffusion characteristics of implanted Si and Be in Al[sub 0.5]In[sub 0.5]P

Pearton, S.J.; Hobson, W.S.
March 1992
Applied Physics Letters;3/2/1992, Vol. 60 Issue 9, p1117
Academic Journal
Investigates the electrical activation characteristics of implanted silicon and beryllium in Al[sub 0.5]In[sub 0.5]P grown lattice. Determination of limiting sheet electron densities and sheet hole densities; Display of extensive redistribution by the implanted beryllium; Lack of measurable motion of the silicon implant.


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