Effects of HF cleaning and subsequent heating on the electrical properties of silicon (100)

Huang, L.J.; Lau, W.M.
March 1992
Applied Physics Letters;3/2/1992, Vol. 60 Issue 9, p1108
Academic Journal
Investigates the changes in surface-band bending of boron-doped and phosphorus-doped silicon samples. Exposure of samples to hydrofluoric acid with varying concentrations; Effects of subsequent thermal annealing; Reduction of surface gap states; Recovery of boron deactivation.


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