Measurements of Al-AlInAs Schottky barriers prepared in situ by molecular beam epitaxy

Gueissaz, F.; Gailhanou, M.
March 1992
Applied Physics Letters;3/2/1992, Vol. 60 Issue 9, p1099
Academic Journal
Investigates the deposition of aluminum in situ on high crystalline n-doped aluminum indium arsenide grown by molecular beam epitaxy. Presence of an ideality factor; Agreement between capacitance versus voltage and current versus temperature measurements; Result of inhomogeneities in the crystal matrix.


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