TITLE

Recombination at clean and decorated misfit dislocations

AUTHOR(S)
Radzimski, Z.J.; Zhou, T.Q.
PUB. DATE
March 1992
SOURCE
Applied Physics Letters;3/2/1992, Vol. 60 Issue 9, p1096
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the electrical activity of interfacial misfit dislocation in silicon. Use of electron beam induced current technique in a scanning electron microscope; Decoration of defects with known metallic impurities; Discussion of the differences in relation to the detection limits of electron beam.
ACCESSION #
4227293

 

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