TITLE

Low-resistance smooth-surface Ti/Al/Cr/Mo/Au n-type Ohmic contact to AlGaN/GaN heterostructures

AUTHOR(S)
Yung-Ling Lan; Hung-Cheng Lin; Hsueh-Hsing Liu; Geng-Yen Lee; Fan Ren; Pearton, Stephen J.; Mao-Nan Chang; Jen-Inn Chyi
PUB. DATE
June 2009
SOURCE
Applied Physics Letters;6/15/2009, Vol. 94 Issue 24, p243502
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A comparative study of the specific contact resistivity and surface morphology of Ti/Al/Ni/Au, Ti/Cr/Mo/Au, and Ti/Al/Cr/Mo/Au metal contact stacks on AlGaN/GaN heterostructures is reported. Compared to the conventional Ti/Al/Ni/Au contact, the Ti/Al/Cr/Mo/Au contact has much smoother surface and achieves minimum specific contact resistivity of 1.1×10-6 Ω cm2. This contact maintains its low contact resistivity after storage at 200 °C for 100 h in N2. The robustness of this contact is attributed to the Cr and Mo layers, which suppress the formation of Al–Au alloys in the contact stack.
ACCESSION #
42223786

 

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