TITLE

Charge pumping method for photosensor application by using amorphous indium-zinc oxide thin film transistors

AUTHOR(S)
Po-Tsun Liu; Yi-Teh Chou; Li-Feng Teng
PUB. DATE
June 2009
SOURCE
Applied Physics Letters;6/15/2009, Vol. 94 Issue 24, p242101
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The study investigated the photoreaction behavior of amorphous indium-zinc oxide thin film transistor (a-IZO TFT), which was thought to be insensitive to visible light. The obvious threshold voltage shift was observed after light illumination, and it exhibited slow recovery while returning to initial status. The photoreaction mechanism is well explained by the dynamic equilibrium of charge exchange reaction between O2(g) and O2- in a-IZO layer. A charge pumping technique is used to confirm the mechanism and accelerate recoverability. Using knowledge of photoreaction behavior, an operation scheme of photosensing elements consist of a-IZO TFT is also demonstrated in this work.
ACCESSION #
42223783

 

Related Articles

  • Low-voltage indium gallium zinc oxide thin film transistors on paper substrates. Wantae Lim; Douglas, E. A.; Norton, D. P.; Pearton, S. J.; Ren, F.; Young-Woo Heo; Son, S. Y.; Yuh, J. H. // Applied Physics Letters;2/1/2010, Vol. 96 Issue 5, p053510 

    We have fabricated bottom-gate amorphous (α-) indium-gallium-zinc-oxide (InGaZnO4) thin film transistors (TFTs) on both paper and glass substrates at low processing temperature (≤100 °C). As a water and solvent barrier layer, cyclotene (BCB 3022–35 from Dow Chemical) was...

  • Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress. Te-Chih Chen; Ting-Chang Chang; Chih-Tsung Tsai; Tien-Yu Hsieh; Shih-Ching Chen; Chia-Sheng Lin; Ming-Chin Hung; Chun-Hao Tu; Jiun-Jye Chang; Po-Lun Chen // Applied Physics Letters;9/13/2010, Vol. 97 Issue 11, p112104 

    In this letter, we investigate the impact of the light illumination on the stability of indium–gallium–zinc oxide thin film transistors under positive gate-bias stress. The noticeable decrease in threshold voltage (Vt) shift more than 5.5 V under illuminated positive gate-bias...

  • Effect of Ga/In ratio on the optical and electrical properties of GaInZnO thin films grown on SiO2/Si substrates. Kang, Donghun; Song, Ihun; Kim, Changjung; Park, Youngsoo; Kang, Tae Dong; Lee, Ho Suk; Park, Jun-Woo; Baek, Seoung Ho; Choi, Suk-Ho; Lee, Hosun // Applied Physics Letters;8/27/2007, Vol. 91 Issue 9, p091910 

    Amorphous GaInZnO and polycrystalline ZnO thin films are grown by rf magnetron sputtering. Their optical properties are investigated by spectroscopic ellipsometry. The optical gap of the GaInZnO film increases with the increase of Ga content and by annealing. These are attributed to the large...

  • Reduction of persistent photoconductivity in ZnO thin film transistor-based UV photodetector. Ivanoff Reyes, Pavel; Ku, Chieh-Jen; Duan, Ziqing; Xu, Yi; Garfunkel, Eric; Lu, Yicheng // Applied Physics Letters;7/16/2012, Vol. 101 Issue 3, p031118 

    We report a ZnO-based thin film transistor UV photodetector with a back gate configuration. The thin-film transistor (TFT) aspect ratio W/L is 150 μm/5 μm and has a current on-off ratio of 1010. The detector shows UV-visible rejection ratio of 104 and cut-off wavelength of 376 nm. The...

  • Improvement in both mobility and bias stability of ZnSnO transistors by inserting ultra-thin InSnO layer at the gate insulator/channel interface. Kim, Ji-In; Hwan Ji, Kwang; Yoon Jung, Hong; Yeob Park, Se; Choi, Rino; Jang, Mi; Yang, Hoichang; Kim, Dae-Hwan; Bae, Jong-Uk; Dong Kim, Chang; Kyeong Jeong, Jae // Applied Physics Letters;9/19/2011, Vol. 99 Issue 12, p122102 

    This study examined the effect of the thickness of interfacial indium-tin oxide (ITO) on the performance and bias reliability of zinc-tin oxide (ZTO) thin film transistors (TFTs). The 3.5-nm-thick ITO-inserted ZTO TFTs exhibited superior mobility (43.2 cm2/V s) to that of the ZTO only TFTs (31.6...

  • Characterization of second and third order optical nonlinearities of ZnO sputtered films. Larciprete, M. C.; Haertle, D.; Belardini, A.; Bertolotti, M.; Sarto, F.; Günter, P. // Applied Physics B: Lasers & Optics;Mar2006, Vol. 82 Issue 3, p431 

    We measured the second and third order optical nonlinearity of zinc oxide, grown on glass substrates by the ion beam sputtering technique. Second and third harmonic generation measurements were performed by means of the rotational Maker fringes technique for different polarization...

  • Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering. Carcia, P. F.; McLean, R. S.; Reilly, M. H.; Nunes, G. // Applied Physics Letters;2/17/2003, Vol. 82 Issue 7, p1117 

    We fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature. The best devices had field-effect mobility of more than 2 cm²/V s and an on/off ratio> 10[sup 6]. These ZnO films had resistivity ∼10[sup 5] ohm cm, with high optical...

  • The influence of visible light on transparent zinc tin oxide thin film transistors. Görrn, P.; Lehnhardt, M.; Riedl, T.; Kowalsky, W. // Applied Physics Letters;11/5/2007, Vol. 91 Issue 19, p193504 

    The characteristics of transparent zinc tin oxide thin film transistors (TTFTs) upon illumination with visible light are reported. Generally, a reversible decrease of threshold voltage Vth, saturation field effect mobility μsat, and an increase of the off current are found. The time scale of...

  • Enhancing the retention properties of ZnO memory transistor by modifying the channel/ferroelectric polymer interface. Park, C. H.; Lee, Gyubaek; Lee, Kwang H.; Seongil Im; Lee, Byoung H.; Sung, Myung M. // Applied Physics Letters;10/12/2009, Vol. 95 Issue 15, p153502 

    We report on the fabrication of ZnO nonvolatile memory thin-film transistors (NVM-TFTs) with thin poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] ferroelectric layer. Our NVM-TFT operates on glass substrates under low voltage write-erase (WR-ER) pulse of ±20 V with a maximum field...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics