TITLE

Resonant enhancement of second order sideband generation for intraexcitonic transitions in GaAs/AlGaAs multiple quantum wells

AUTHOR(S)
Wagner, M.; Schneider, H.; Winnerl, S.; Helm, M.; Roch, T.; Andrews, A. M.; Schartner, S.; Strasser, G.
PUB. DATE
June 2009
SOURCE
Applied Physics Letters;6/15/2009, Vol. 94 Issue 24, p241105
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We present an experimental study on efficient second order sideband generation in symmetric undoped GaAs/AlGaAs multiple quantum wells. A near-infrared laser tuned to excitonic interband transitions is mixed with an in-plane polarized terahertz beam from a free-electron laser. The terahertz beam is tuned either to the intraexcitonic heavy-hole 1s-2p transition or to the interexcitonic heavy-hole light-hole transition. We find strong evidence that the intraexcitonic transition is of paramount influence on n=±2 sideband generation, leading to an order-of-magnitude resonant enhancement of the conversion efficiency up to 0.1% at low temperature. At room temperature, the efficiency drops only by a factor of 7 for low terahertz powers.
ACCESSION #
42223777

 

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