TITLE

Near-infrared silicon quantum dots metal-oxide-semiconductor field-effect transistor photodetector

AUTHOR(S)
Jia-Min Shieh; Wen-Chien Yu; Huang, Jung Y.; Chao-Kei Wang; Bau-Tong Dai; Huang-Yan Jhan; Chih-Wei Hsu; Hao-Chung Kuo; Fu-Liang Yang; Ci-Ling Pan
PUB. DATE
June 2009
SOURCE
Applied Physics Letters;6/15/2009, Vol. 94 Issue 24, p241108
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A fully silicon-based metal-oxide-semiconductor field-effect transistor is demonstrated for the detection of near-infrared light. Si nanocrystals (nc-Si) are synthesized in the nanopore channels of mesoporous silica (MS) inserted between two oxide layers to form a complete gate structure of polycrystalline Si/SiO2/nc-Si-in-MS/SiO2 with a polycrystalline Si electrode. Illuminating the gate with near-infrared light, a photoresponsivity as high as 2.8 A/W at 1.55 μm can be achieved. The improved photoresponsivity is attributed to from optical transitions via interface states and a current amplification mechanism of the device.
ACCESSION #
42223759

 

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