Spin dependent recombination in magnetic semiconductor

Tashpour, Hojjat; Vesaghi, M. A.
June 2009
Applied Physics Letters;6/15/2009, Vol. 94 Issue 24, p242103
Academic Journal
The effect of spin dependent recombination on the transport properties of magnetic semiconductors is investigated theoretically. In particular, for p-type direct band gap semiconductors, a theory based on classic Shockley equations is formulated. In this theory the density of spin and charge has been evaluated analytically by solving the diffusive transport equation and it is shown that the difference between recombination rates affect the lifetimes of spin and charge significantly. It is also demonstrated that a considerable spin charge coupling occur. Application of this theory to pure band to band recombination process is discussed.


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