80 GHz field-effect transistors produced using high purity semiconducting single-walled carbon nanotubes

Nougaret, L.; Happy, H.; Dambrine, G.; Derycke, V.; Bourgoin, J. -P.; Green, A. A.; Hersam, M. C.
June 2009
Applied Physics Letters;6/15/2009, Vol. 94 Issue 24, p243505
Academic Journal
This paper presents the high frequency performance of single-walled carbon nanotube (SWNT) field-effect transistors, with channel consisting of dense networks of high purity semiconducting SWNTs. Using SWNT samples containing 99% pure semiconducting SWNTs, we achieved operating frequencies above 80 GHz. This record frequency does not require aligned SWNTs, thus demonstrating the remarkable potential of random networks of sorted SWNTs for high frequency electronics.


Related Articles

  • Multiple negative resistances in trenched structures bridged with carbon nanotubes. Dragoman, M.; Konstantinidis, G.; Kostopoulos, A.; Dragoman, D.; Neculoiu, D.; Buiculescu, R.; Plana, R.; Coccetti, F.; Hartnagel, H. // Applied Physics Letters;7/28/2008, Vol. 93 Issue 4, p043117 

    Field effect transistor (FET)-like structures with a trench as “gate” were fabricated on GaAs substrates. The bottom of the trench as well as the “source” and “drain” regions were metallized. Bundles of nanotubes were then suspended over the trench. At a...

  • Multichannel carbon nanotube field-effect transistors with compound channel layer. Changxin Chen; Wei Zhang; Yafei Zhang // Applied Physics Letters;11/9/2009, Vol. 95 Issue 19, p192110 

    A multichannel carbon nanotube field-effect transistor (MC-CNTFET) with compound channel layer has been built. In this MC-CNTFET, a dispersedly directed array of long single-walled carbon nanotubes (SWCNTs) is used as primary channel layer and a randomly aligned monolayer network of short SWCNTs...

  • Improvement of transfer characteristic for carbon nanotube field effect transistor with poly crystalline PbZrxTi1-xO3 gate by ionic liquid. Kataoka, Shogo; Arie, Takayuki; Akita, Seiji // Applied Physics Letters;11/28/2011, Vol. 99 Issue 22, p223514 

    We have investigated the transfer characteristics of carbon nanotube (CNT) field effect transistors (FETs) with poly crystalline PbZrxTi1-xO3 (PZT) gate with the application of ionic liquid. The transconductance of the devices was improved more than three times by applying ionic liquid with high...

  • Design Of Synchronous Counter Using Carbon Nanotube Field Effect Transistor. Saravanan, V.; Kannan, V. // Indian Streams Research Journal;Sep2012, Vol. 2 Issue 8, Special section p1 

    This paper presents the ultra low power synchronous counter using carbon nanotube field effect transistor. The proposed counter is designed using 18 nm technology. The counter is designed using T flip flop. Proposed design minimizes the power consumption and operating voltage. As far as it is...

  • Segregating nanotubes. J. N. A. M. // Physics Today;Aug2008, Vol. 61 Issue 8, p24 

    The article focuses on the single-walled carbon nanotubes (SWNTs), which are being contended to augment silicon as the semiconducting layer of the field-effect transistor. However, SWNT synthesis produces a mixture of semiconducting and metallic nanotubes, in which the metallic ones cause...

  • Effect of Device Parameters on Carbon Nanotube Field Effect Transistor in Nanometer Regime. Sinha, Sanjeet Kumar; Chaudhury, Saurabh // Journal of Nano Research;2016, Vol. 36, p64 

    In this paper, we have analyzed the effect of chiral vector, temperature, metal work function, channel length and High-K dielectric on threshold voltage of CNTFET devices. We have also compared the effect of oxide thickness on gate capacitance and justified the advantage a CNTFET provides over...

  • Transport properties of single-walled carbon nanotube transistors after gamma radiation treatment. Vitusevich, S. A.; Sydoruk, V. A.; Petrychuk, M. V.; Danilchenko, B. A.; Klein, N.; Offenhäusser, A.; Ural, A.; Bosman, G. // Journal of Applied Physics;Mar2010, Vol. 107 Issue 6, p063701 

    Single-walled carbon nanotube field-effect transistors (CNT-FETs) were characterized before and after gamma radiation treatment using noise spectroscopy. The results obtained demonstrate that in long channel CNT-FETs with a length of 10 μm the contribution of contact regions can be neglected....

  • Dependence of sensitivity of biosensor for carbon nanotube field-effect transistor with top-gate structures. Abe, Masuhiro; Murata, Katsuyuki; Matsumoto, Kazuhiko // Journal of Applied Physics;Apr2010, Vol. 107 Issue 8, p084504 

    In this study, we used biosensors that employ a top-gate-type carbon nanotube field-effect transistor (CNT-FET) for detecting target proteins in a solution. The dependence of the sensitivity of the biosensor on structural characteristics of the top gate, such as the thicknesses of its insulator...

  • Performance Prediction of Graphene Nanoribbon and Carbon Nanotube Transistors. Tan, Michael Loong Peng; Amaratunga, Gehan A. J. // AIP Conference Proceedings;5/25/2011, Vol. 1341 Issue 1, p365 

    Carbon nanotubes (CNTs) and graphene nanoribbons (GNRs) field-effect transistor (FET) can be the basis for a quasi-one- dimensional (Q1D) transistor technology. Recent experiments show that the on-off ratio for GNR devices can be improved to level exploration of transistor action is justified....


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics