The complex evolution of strain during nanoscale patterning of 60 nm thick strained silicon layer directly on insulator

Moutanabbir, O.; Reiche, M.; Erfurth, W.; Naumann, F.; Petzold, M.; Gösele, U.
June 2009
Applied Physics Letters;6/15/2009, Vol. 94 Issue 24, p243113
Academic Journal
The strain behavior in nanoscale patterned biaxial tensile strained Si layer on insulator is investigated in 60-nm-thick nanostructures with dimensions in the 80–400 nm range. The in-plane strain is evaluated by using UV micro-Raman. We found that less than 30% of the biaxial strain is maintained in the 200×200 nm2 nanostructures. This relaxation, due to the formation of free surfaces, becomes more important in smaller nanostructures. The strain is completely relieved at 80 nm. This phenomenon is described based on detailed three-dimensional finite element simulations. The anisotropic relaxation in rectangular nanostructures is also discussed.


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