Extracting the Richardson constant: IrOx/n-ZnO Schottky diodes

Sarpatwari, K.; Awadelkarim, O. O.; Allen, M. W.; Durbin, S. M.; Mohney, S. E.
June 2009
Applied Physics Letters;6/15/2009, Vol. 94 Issue 24, p242110
Academic Journal
A method is proposed to account for the effects of Schottky barrier height inhomogeneities on the Richardson constant (A*) extracted from current-voltage-temperature (I-V-T) measurements. Our approach exploits a correlation between the extracted Richardson constant and effective barrier height. As a test case, the method is applied to I-V-T measurements performed on IrOx/n-ZnO Schottky diodes. A homogeneous A* value of 27±7 A cm-2 K-2 is obtained, in close agreement with the theoretically expected value of 32 A cm-2 K-2 for n-type ZnO.


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