Multistate storage through successive phase change and resistive change

Liangcai Wu; Zhitang Song; Feng Rao; Yuefeng Gong; Songlin Feng
June 2009
Applied Physics Letters;6/15/2009, Vol. 94 Issue 24, p243115
Academic Journal
Combination of phase change and resistive change was proposed to achieve multistate storage in one cell and Ge2Sb2Te5 (GST)/tungsten oxide (WOx) stack was fabricated. In reset process, three resistance staircases were observed, corresponding to the device transition from low-resistance-state (LRS) to a medium-resistance-state (MRS) first, and then transition from the MRS to high-resistance-state (HRS). In set process, two S-shaped negative-differential-resistances were observed, corresponding to the device transition from HRS to MRS first, and then transition from MRS to LRS. The GST/WOx architecture with successive phase change and resistive change is considered to have potential for multistate storage.


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