Growth and band alignment of epitaxial Ni metal gate on crystalline LaAlO3 (001) dielectric film

Mi, Y. Y.; Wang, S. J.; Zegenhagen, J.; Chai, J. W.; Pan, J. S.; Huan, C. H. A.; Feng, Y. P.; Ong, C. K.
June 2009
Applied Physics Letters;6/15/2009, Vol. 94 Issue 24, p242903
Academic Journal
An epitaxial Ni thin film is grown on a LaAlO3 single-crystalline thin film on Si (001). The p-type Schottky barrier height at the Ni/LaAlO3 interface is measured to be 2.88 eV by x-ray photoemission spectroscopy. The effective work function of the Ni film on LaAlO3 is determined to be 5.15 eV. Good epitaxial quality and a high effective work function suggest that Ni is a promising gate material integrated with LaAlO3 dielectric films for p-type metal oxide semiconductor field effect transistors.


Related Articles

  • Emission lifetime of polarizable charge stored in nano-crystalline Si based single-electron memory. Hinds, Bruce J.; Yamanaka, Takayuki; Oda, Shunri // Journal of Applied Physics;12/15/2001, Vol. 90 Issue 12, p6402 

    The lifetime of the emission of a single electron stored in a nanocrystalline Si (nc-Si) dot has been studied in order to understand the physical processes for memory applications. A small active area field effect transistor channel (50×25 nm) is defined by electron-beam lithography on a...

  • Grown-facet-dependent characteristics of silicon-on-insulator by lateral solid phase epitaxy. Kusukawa, K.; Moniwa, M.; Murakami, E.; Warabisako, T.; Miyao, M. // Applied Physics Letters;5/16/1988, Vol. 52 Issue 20, p1681 

    Electrical characteristics of Si layers on SiO2 formed by seeded lateral solid phase epitaxy are evaluated using metal-oxide-semiconductor field-effect transistors (MOSFET’s) fabricated in the layer. To evaluate the {110} and {111} facet grown areas separately, the locations of the...

  • Strained Si n-channel metal-oxide-semiconductor transistor on relaxed Si[sub 1-x]Ge[sub x] formed... John, S.; Ray, S.K.; Quinones, E.; Banerjee, S.K. // Applied Physics Letters;4/5/1999, Vol. 74 Issue 14, p2076 

    Describes the application of germanium (Ge) implantation followed by high-temperature solid phase epitaxy to form a relaxed substrate and eliminate the need for the growth of relaxed Si[sub 1-x]Ge[sub x] layers. Fabrication of n-channel metal-oxide semiconductor field-effect transistors...

  • Scheme for the fabrication of ultrashort channel metal-oxide-semiconductor field-effect transistors. Appenzeller, J.; Martel, R.; Solomon, P.; Chan, K.; Avouris, Ph.; Knoch, J.; Benedict, J.; Tanner, M.; Thomas, S.; Wang, K. L.; Wang, K.L.; del Alamo, J. A.; del Alamo, J.A. // Applied Physics Letters;7/10/2000, Vol. 77 Issue 2 

    We present a scheme for the fabrication of ultrashort channel length metal-oxide-semiconductor field-effect transistors (MOSFETs) involving nanolithography and molecular-beam epitaxy. The active channel is undoped and is defined by a combination of nanometer-scale patterning and anisotropic...

  • Size difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistors. Pey, K.L.; Tung, C.H.; Tang, L.J.; Lin, W.H.; Radhakrishnan, M.K. // Applied Physics Letters;10/6/2003, Vol. 83 Issue 14, p2940 

    The physical dimension of the hillocks formed during gate-dielectric-breakdown-induced epitaxy (DBIE) is found to be dependent on transistor type. When narrow transistors of area between 3.0×10[sup -10] and 8.0×10[sup -10] cm[sup 2] with a gate oxide ranging from 16 to 33 Å...

  • Ultrathin silicon oxynitride film formation by plasma immersion nitrogen implantation. Baumvol, I.J.R.; Krug, C.; Stedile, F.C.; Green, M.L.; Jacobson, D.C.; Eaglesham, D.; Bernstein, J.D.; Shao, J.; Denholm, A.S.; Kellerman, P.L. // Applied Physics Letters;2/8/1999, Vol. 74 Issue 6, p806 

    Proposes a method for preparing ultrathin silicon oxynitride films for gate dielectrics used in deep submicron metal-oxide-semiconductor field effect transistor device structures. Plasma immersion implantation pulse voltages and fluences implanted into silicon dioxide films; Areal densities of...

  • Threshold Voltage Adjustment for 28nm HfOx/ZrOx/HfOx Gate Dielectric of nMOSFETs using DPN Process with Annealing Temperatures. Win-Der Lee; Mu-Chun Wang // Advanced Materials Research;2014, Issue 910, p44 

    Following the investigation of the relationship among the annealing temperatures for decoupled plasma nitridation (DPN) process to indirectly manipulate the amount of oxygen vacancy in high-k (HK) gate dielectric, the expected threshold voltage (Vt) of n-channel MOSFET (nMOSFET) device is able...

  • Carbon segregation as a strain relaxation mechanism in thin germanium-carbon layers deposited directly on silicon. Garcia-Gutierrez, D. I.; José-Yacamán, M.; Lu, Shifeng; Kelly, D. Q.; Banerjee, S. K. // Journal of Applied Physics;8/15/2006, Vol. 100 Issue 4, p044323 

    We report experimental evidence for the segregation and preferential localization of C atoms at the surface and substrate interfaces in thin Ge1-xCx films deposited directly on Si (100). The results are interpreted in the context of C segregation providing a mechanism for strain relaxation. Four...

  • Ohmic contact on n-type Ge using Yb-germanide. Zheng, Zhi-Wei; Ku, Teng-Chieh; Liu, Ming; Chin, Albert // Applied Physics Letters;11/26/2012, Vol. 101 Issue 22, p223501 

    Poor ohmic contact by Fermi-level pinning to valence band (EV) edge is one of the major challenges for germanium (Ge) n-type metal-oxide-semiconductor field-effect transistor (nMOSFET). Using low work-function rare-earth ytterbium (Yb), good ohmic contact on n-type Ge with alleviated Fermi-level...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics