TITLE

Growth and band alignment of epitaxial Ni metal gate on crystalline LaAlO3 (001) dielectric film

AUTHOR(S)
Mi, Y. Y.; Wang, S. J.; Zegenhagen, J.; Chai, J. W.; Pan, J. S.; Huan, C. H. A.; Feng, Y. P.; Ong, C. K.
PUB. DATE
June 2009
SOURCE
Applied Physics Letters;6/15/2009, Vol. 94 Issue 24, p242903
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
An epitaxial Ni thin film is grown on a LaAlO3 single-crystalline thin film on Si (001). The p-type Schottky barrier height at the Ni/LaAlO3 interface is measured to be 2.88 eV by x-ray photoemission spectroscopy. The effective work function of the Ni film on LaAlO3 is determined to be 5.15 eV. Good epitaxial quality and a high effective work function suggest that Ni is a promising gate material integrated with LaAlO3 dielectric films for p-type metal oxide semiconductor field effect transistors.
ACCESSION #
42223715

 

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