TITLE

Low-temperature organomettalic vapor phase epitaxy of InSb using the novel Sb precursor

AUTHOR(S)
Stauf, G.T.; Gasklll, D.K.
PUB. DATE
March 1991
SOURCE
Applied Physics Letters;3/25/1991, Vol. 58 Issue 12, p1311
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Studies low-temperature organometallic vapor phase epitaxy of InSb using the novel Sb precursor triisophropylantimony. Electronic transport results; Use of triisopropylantimony and trimethylindium.
ACCESSION #
4222124

 

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