Annealing induced refractive index and absorption changes of low-temperature grown GaAs

Dankowski, S.U.; Kiesel, P.
December 1994
Applied Physics Letters;12/19/1994, Vol. 65 Issue 25, p3269
Academic Journal
Presents the annealing induced refractive index and absorption changes of low-temperature grown gallium arsenide (LT-GaAs). Comparison of refractive index difference between LT-GaAs layer and the substrate; Relationship between increased annealing temperature, refractive index and strong absorption at photon energies.


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