TITLE

Annealing induced refractive index and absorption changes of low-temperature grown GaAs

AUTHOR(S)
Dankowski, S.U.; Kiesel, P.
PUB. DATE
December 1994
SOURCE
Applied Physics Letters;12/19/1994, Vol. 65 Issue 25, p3269
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents the annealing induced refractive index and absorption changes of low-temperature grown gallium arsenide (LT-GaAs). Comparison of refractive index difference between LT-GaAs layer and the substrate; Relationship between increased annealing temperature, refractive index and strong absorption at photon energies.
ACCESSION #
4221750

 

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