Temperature dependence of photoluminescence linewidth in modulation-doped pseudomorphic high

Yu, P.W.; Jogai, B.
December 1994
Applied Physics Letters;12/19/1994, Vol. 65 Issue 25, p3263
Academic Journal
Examines the temperature dependence of photoluminescence linewidth in terms of two-dimensional electron gas sheet concentration for modulation doped transistor structures. Use of Hamiltonian-Poisson equation to obtain electron concentration; Determination of hole localization; Correlation of electron density with photoluminescence linewidth.


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