Paramagnetic centers at and near the Si/SiO[sub x] interface in porous silicon

Pivac, B.; Rakvin, B.
December 1994
Applied Physics Letters;12/19/1994, Vol. 65 Issue 25, p3260
Academic Journal
Examines the formation of paramagnetic centers in aged porous silicon samples using electron paramagnetic resonance. Defects exhibited by samples oxidized by aging in air at room temperature; Interfaces between silicon nanocrytallites and SiO[sub x] layer; Absence of paramagnetic centers characteristic of thin silica layers on silicon.


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