Novel low-resistance ohmic contact to n-type GaAs using Cu[sub 3]Ge

Aboelfotoh, M.O.; Lin, C.L.
December 1994
Applied Physics Letters;12/19/1994, Vol. 65 Issue 25, p3245
Academic Journal
Presents a thermally stable, low resistance ohmic contact to n-type gallium arsenide using Cu[sub 3]Ge. Electrical stability of the contact during annealing; Characteristic of the material at varied germanium concentration; Comparison of transconductance to devices with germanium/palladium and AuGeNi contacts.


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