Mediation of strain from In[sub 0.36]Ga[sub 0.64]As layers through GaAs barriers in multiple

Ekenstedt, M.J.; Chen, W.Q.
December 1994
Applied Physics Letters;12/19/1994, Vol. 65 Issue 25, p3242
Academic Journal
Examines the strain mediation in multiple quantum well structures consisting of In[sub 0.36]Ga[sub 0.64]As layers separated by gallium arsenide barriers using photoluminescence. Evaluation of the strain in layers grown by molecular beam epitaxy; Relationship of strain mediation and number of layers; Value of barrier thickness required to stop strain mediation.


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