TITLE

Low-temperature Si(001) epitaxy using low-energy (...18 eV) Si atoms

AUTHOR(S)
Lee, N.-E.; Tomasch, G.A.
PUB. DATE
December 1994
SOURCE
Applied Physics Letters;12/19/1994, Vol. 65 Issue 25, p3236
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents study results on the low temperature epitaxy of silicon(001) using hyperthermal silicon condensing particles. Use of an ultrahigh vacuum ion beam sputter deposition system; Effects of the use of energetic rather than thermal beams; Increase in the epitaxial thickness of the substrates secondary to effective filling of interisland trenches.
ACCESSION #
4221739

 

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