Sensitivity of ion induced charge pulses to the electrical and crystallographic properties of 60

Breese, M.B.H.; King, P.J.C.
December 1994
Applied Physics Letters;12/19/1994, Vol. 65 Issue 25, p3227
Academic Journal
Presents evidence on the dependence of ion-induced charge pulses from epitaxial Si[sub 0.875]Ge[sub 0.125]/silicon on the crystallographic and electrical properties of 60 degrees dislocations. Use of ion beam induced charge images in several alignment; Correlation of results with transmission and backscattering ion channeling analysis.


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