TITLE

Sensitivity of ion induced charge pulses to the electrical and crystallographic properties of 60

AUTHOR(S)
Breese, M.B.H.; King, P.J.C.
PUB. DATE
December 1994
SOURCE
Applied Physics Letters;12/19/1994, Vol. 65 Issue 25, p3227
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents evidence on the dependence of ion-induced charge pulses from epitaxial Si[sub 0.875]Ge[sub 0.125]/silicon on the crystallographic and electrical properties of 60 degrees dislocations. Use of ion beam induced charge images in several alignment; Correlation of results with transmission and backscattering ion channeling analysis.
ACCESSION #
4221736

 

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