TITLE

Electric field effects on the photoluminescence in modulation-doped pseudomorphic

AUTHOR(S)
Yang, G.M.; Seo, K.S.
PUB. DATE
December 1994
SOURCE
Applied Physics Letters;12/19/1994, Vol. 65 Issue 25, p3224
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the electric field effects on the photoluminescence spectra of modulation-doped aluminum gallium arsenide (GaAs)/indium GaAs/GaAs single quantum wells grown by metalorganic chemical vapor deposition. Observation of parity forbidden transition in samples with high electron density; Dependence of luminescence line shape on the external bias.
ACCESSION #
4221735

 

Related Articles

  • Built-In Electric Field in High Quality GaN/AlGaN Quantum Wells. Zieleniewski, K.; Pakuła, K.; Bozek, R.; Masztalerz, K.; Wysmołek, A.; Stępniewski, R. // Acta Physica Polonica, A.;May2011, Vol. 119 Issue 5, p657 

    We report studies on electric field built in GaN/Al0.09Ga0.91N structure of nominally 6 nm wide quantum well. The sample was grown in horizontal metal-organic chemical vapor deposition reactor using innovative technology that decreases the density of screw dislocations. Firstly, using visible...

  • Photoluminescence emission in deep ultraviolet region from GaN/AlN asymmetric-coupled quantum wells. Guan Sun; Ding, Yujie J.; Guangyu Liu; Huang, G. S.; Hongping Zhao; Tansu, Nelson; Khurgin, Jacob B. // Applied Physics Letters;7/12/2010, Vol. 97 Issue 2, p021904 

    We have investigated the photoluminescence spectra from GaN/AlN asymmetric-coupled quantum wells grown by metal-organic chemical vapor deposition. Deep ultraviolet photoluminescence peaks with photon energies up to 5.061 eV and dramatically improved intensities at low temperatures are identified...

  • Growth and characterization of crack-free semipolar {1-101}InGaN/GaN multiple-quantum well on V-grooved (001)Si substrates. Guan-Ting Chen; Shih-Pang Chang; Jen-Inn Chyi; Mao-Nan Chang // Applied Physics Letters;6/16/2008, Vol. 92 Issue 24, p241904 

    This work elucidates the two-stage growth of GaN on V-grooved (001)Si substrates using metal-organic chemical vapor deposition. The first growth stage proceeds on the {111}Si sidewalls until GaN fills the V grooves. Then the second stage continues and leads to a semipolar surface with the...

  • Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4H-SiC substrate. Pozina, G.; Hemmingsson, C.; Forsberg, U.; Lundskog, A.; Kakanakova-Georgieva, A.; Monemar, B.; Hultman, L.; Janzén, E. // Journal of Applied Physics;Dec2008, Vol. 104 Issue 11, p113513 

    AlGaN/AlN/GaN high electron mobility transistor heterostructures grown by metal-organic chemical vapor deposition have been studied by temperature dependent time-resolved photoluminescence. The AlGaN-related emission is found to be sensitive to the excitation power and to the built-in internal...

  • Low-temperature photoluminescence in SiGe single quantum wells. Kalem, S.; Curtis, T.; de Boer, W.B.; Stillman, G.E. // Applied Physics A: Materials Science & Processing;1998, Vol. 66 Issue 1, p23 

    Abstract. We have investigated the low-temperature photoluminescence properties of n-type modulation doped Si[sub 1-x]Ge[sub x] single quantum wells (x = 0.19) grown by rapid thermal chemical vapor deposition at 625 Celsius. A well-resolved strong excitonic luminescence with TO-phonon and...

  • Optical studies of very high-purity GaAs grown by metal-organic chemical-vapor deposition using.... van de Ziel, Jan P.; Xuefei Tang // Applied Physics Letters;8/11/1997, Vol. 71 Issue 6, p791 

    Presents low-temperature photoluminescence studies of high-purity epitaxial gallium arsenide quantum wells. Use of on-site point-of-use arsine generator in the metal-organic chemical-vapor deposition (MOCVD) growth process; Safety of the MOCVD growth process; Implications for photodetectors and...

  • Photoluminescence spectra of MOCVD-grown P-doped GaAS/Al[sub x] Ga[sub 1-x] As MQW. Adelabu, J. S. A. // Applied Physics A: Materials Science & Processing;1996, Vol. 62 Issue 1, p83 

    PhotoLuminescence (PL) measurement techniques have been used to investigate on MOCVD grown P-doped GaAs/Al[sub x] Ga[sub 1-x] As (x=0.3) Multiple Quantum Wells (MQW). The spectra reveal extrinsic luminescence characteristics of e–A[sup 0] transitions for interface and centre of well...

  • Optical investigations of GaAs-GaInP quantum wells and superlattices grown by metalorganic.... Omnes, F.; Razeghi, M. // Applied Physics Letters;8/26/1991, Vol. 59 Issue 9, p1034 

    Examines the photoluminescence of GaAs-Ga[sub 0.51]In[sub 0.49]P lattice matched quantum wells and superlattices grown by metalorganic chemical vapor deposition. Attribution of the sharp peaks during excitation to electron transitions; Indium-induced memory effect at the GaInP-GaAs interface.

  • Light emission from a silicon quantum well. Steigmeier, E. F.; Morf, R.; Gru¨tzmacher, D.; Auderset, H.; Delley, B.; Wessicken, R. // Applied Physics Letters;12/30/1996, Vol. 69 Issue 27, p4165 

    We compare the photoluminescence (PL) properties of silicon (Si) single quantum well structures, consisting of an either amorphous or crystalline Si layer of 3 nm thickness, embedded between silicon–nitride layers. These structures are grown by plasma-enhanced chemical vapor deposition on...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics