TITLE

ZnMgSeTe light emitting diodes

AUTHOR(S)
Faschinger, W.; Krump, R.
PUB. DATE
December 1994
SOURCE
Applied Physics Letters;12/19/1994, Vol. 65 Issue 25, p3215
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the use of molecular beam epitaxy-grown ZnMgSeTe as a light emitting diode material. Level of doping obtained for optimum compositions of the layers; Characteristics of the p contacts of the diodes; Emission of green electroluminescence by the material up to room temperature.
ACCESSION #
4221732

 

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