ZnMgSeTe light emitting diodes

Faschinger, W.; Krump, R.
December 1994
Applied Physics Letters;12/19/1994, Vol. 65 Issue 25, p3215
Academic Journal
Examines the use of molecular beam epitaxy-grown ZnMgSeTe as a light emitting diode material. Level of doping obtained for optimum compositions of the layers; Characteristics of the p contacts of the diodes; Emission of green electroluminescence by the material up to room temperature.


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