TITLE

Relaxation of InGaAs layers grown on (111)B GaAs

AUTHOR(S)
Sacedon, A.; Calle, F.
PUB. DATE
December 1994
SOURCE
Applied Physics Letters;12/19/1994, Vol. 65 Issue 25, p3212
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the relaxation behavior of indium gallium arsenide layers grown by molecular beam epitaxy on (111)B gallium arsenide. Surface morphology, defect microstructure and optical quality of the structure; Techniques used in the study; Observation of inhomogeneous and anisotropic relaxation in the samples.
ACCESSION #
4221731

 

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