Mechanism responsible for the semi-insulating properties of low-temperature-grown GaAs

Liu, X.; Prasad, A.
December 1994
Applied Physics Letters;12/5/1994, Vol. 65 Issue 23, p3002
Academic Journal
Investigates the mechanism responsible for the semi-insulating properties of low-temperature-grown gallium arsenide. Determination of the concentration of arsenic antisite-related defects; Use of near-infrared absorption and magnetic circular dichroism of absorption; Study of the materials grown and annealed at different temperatures.


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