Counter-oxidation of superficial Si in single-crystalline Si on SiO[sub 2] structure

Takahashi, Yasuo; Ishiyama, Toshihiko
December 1994
Applied Physics Letters;12/5/1994, Vol. 65 Issue 23, p2987
Academic Journal
Proposes an oxidation mechanism for single-crystalline silicon overlying a buried silicon dioxide layer. Growth of the surface oxide; Analysis of the oxidation behavior; Verification of the oxygen penetration through the superficial layer.


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