Importance of steps in heteroepitaxy: The case of aluminum on silicon

Sosnowski, Marek; Ramac, Samuel
December 1994
Applied Physics Letters;12/5/1994, Vol. 65 Issue 23, p2943
Academic Journal
Investigates the dominant epitaxial growth of aluminum(100) films on silicon. Deposition of films by thermal evaporation at room temperature; Exhibition of sharp and intense diffraction; Dependence of crystal quality and the dominance of structure on the substrate treatment and off-cut angle; Details on the epitaxial alignment.


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