Photoluminescence determination of the nitrogen doping concentration in 6H-SiC

Henry, A.; Kordina, O.
November 1994
Applied Physics Letters;11/7/1994, Vol. 65 Issue 19, p2457
Academic Journal
Presents a calibration procedure for the nitrogen impurity in 6 hydrogen-silicon carbide. Validity of the calibration for a large range of n-type doping; Effects of excitation density, temperature during the photoluminescence experiments and the observation of acceptor related lines; Characterization of impurities in semiconductors.


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