TITLE

High p-type doping of ZnSe using Li[sub 3]N diffusion

AUTHOR(S)
Lim, S.W.; Honda, T.
PUB. DATE
November 1994
SOURCE
Applied Physics Letters;11/7/1994, Vol. 65 Issue 19, p2437
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Demonstrates the high p-type doping of ZnSe layer using a Li[sub 3]N diffusion technique. Level of the hole concentration of the p-type ZnSe layer; Resistivity of the layer; Administration of an ohmic contact by using the p[sup +]-type ZnSe as a contact layer for p-ZnSe epilayers.
ACCESSION #
4221654

 

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