TITLE

Determination of the sub-band energy in the V-shaped potential well of delta-doped GaAs by deep

AUTHOR(S)
Zhu, Q.S.; Zhong, Z.T.
PUB. DATE
November 1994
SOURCE
Applied Physics Letters;11/7/1994, Vol. 65 Issue 19, p2425
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Determines the conduction-subband energy levels in V-shaped potential well induced by silicon delta-doping in gallium arsenide using deep level transient spectroscopy (DLTS). Production of four subbands in the well before the Fermi level; Observation of two DLTS peak; Merger of two subbands with low electron concentration into the adjacent DLTS peak.
ACCESSION #
4221649

 

Related Articles

  • Electronic characterization of several 100 μm thick epitaxial GaAs layers. Talbi, N.; Khirouni, K.; Sun, G. C.; Samic, H.; Bourgoin, J. C. // Journal of Materials Science: Materials in Electronics;May2008, Vol. 19 Issue 5, p487 

    Non intentionally doped thick epitaxial GaAs layers, grown by chemical vapour phase epitaxy using a high growth rate, are characterized by different electrical techniques applied on a junction (forward and reverse Current–Voltage characteristics, Current versus time and temperature, Deep...

  • Deep levels induced by high-energy boron ion implantation into p-silicon. Sayama, H.; Takai, M. // Applied Physics Letters;10/5/1992, Vol. 61 Issue 14, p1682 

    Investigates the deep energy levels induced by high-energy boron ion implantation into p-silicon. Utilization of leakage current and deep level transient spectroscopy in the study; Discovery of two hole trap levels in the shallower region; Dependence of the existence of deep levels on the...

  • Investigation of deep levels in PbI2 by photoinduced current transient spectroscopy. Zielinger, J. P.; Pohoryles, B.; Balland, J. C.; Gross, J. G.; Coret, A. // Journal of Applied Physics;1/15/1985, Vol. 57 Issue 2, p293 

    Presents a study that investigated deep levels in lead iodate (PbI[sub2]) by photoinduced current transient spectroscopy for the first time. Benefits from the four-gate treatment method; Features of the excited state of the crystal; Use of PbI[sub2]; Factors that evidenced several energy levels.

  • Defect states in p-type silicon crystals induced by plastic deformation. Ono, Haruhiko; Sumino, Koji // Journal of Applied Physics;1/15/1985, Vol. 57 Issue 2, p287 

    Discusses a study that investigated deep defect states in p-type silicon crystals induced by plastic deformation by means of deep level transient spectroscopy. Kinds of traps having different energy levels within the band gap; Category of the half-filled band model of the dislocation state;...

  • Analysis of defect energy levels in the limit of low emission rates. Lamp, C. D.; Yang, S.; Gangopadhyay, S. // Journal of Applied Physics;3/15/1993, Vol. 73 Issue 6, p2854 

    Presents a study on a deep level transient spectroscopy (DLTS) analysis method. Background on DLTS; Ideal applications; Behavior analysis of closely spaced energy levels.

  • Deep level transient capacitance measurements of GaSb self-assembled quantum dots. Magno, R.; Bennett, Brian R.; Glaser, E. R. // Journal of Applied Physics;11/15/2000, Vol. 88 Issue 10 

    Deep level transient spectroscopy (DLTS) measurements have been made on GaAs n[sup +]p diodes containing GaSb self-assembled quantum dots and control junctions without dots. The self-assembled dots were formed by molecular beam epitaxy using the Stranski-Krastanov growth mode. The dots are...

  • Effect of conduction-band nonparabolicity on quantized energy levels of a quantum well. Hiroshima, T.; Lang, R. // Applied Physics Letters;8/25/1986, Vol. 49 Issue 8, p456 

    The effects of conduction-band nonparabolicity on quantized energy levels of an In0.5Ga0.5As /In0.5Al0.5As quantum well have been analyzed using the original Luttinger–Kohn ‘‘effective mass’’ equation, which is, in principle, valid as long as the perturbation to...

  • Observation of carrier depletion and emission effects on capacitance dispersion in relaxed... Chen, J.F.; Wang, P.Y. // Applied Physics Letters;10/18/1999, Vol. 75 Issue 16, p2461 

    Examines the carrier depletion and emission effects on capacitance dispersion in relaxed quantum wells. Frequency-dependent capacitance measurements; Reason for the difficulty in determining the low-frequency inflection capacitance; Deep-level transient spectroscopy (DLTS).

  • Thermal hole emission from Si/Si1-xGex/Si quantum wells by deep level transient spectroscopy. Chretien, O.; Apetz, R.; Vescan, L.; Souifi, A.; Lüth, H.; Schmalz, K.; Koulmann, J. J. // Journal of Applied Physics;11/1/1995, Vol. 78 Issue 9, p5439 

    Presents information on a study which discussed the determination of the valence band offset between strained Si[sub1-x]Ge[subx] and unstrained silicon (Si) layers by deep level transient spectroscopy (DLTS) on Si/Si[sub1-x]Ge[subx]/Si quantum well structures. Steps of the DLTS measurements;...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics