Determination of the sub-band energy in the V-shaped potential well of delta-doped GaAs by deep

Zhu, Q.S.; Zhong, Z.T.
November 1994
Applied Physics Letters;11/7/1994, Vol. 65 Issue 19, p2425
Academic Journal
Determines the conduction-subband energy levels in V-shaped potential well induced by silicon delta-doping in gallium arsenide using deep level transient spectroscopy (DLTS). Production of four subbands in the well before the Fermi level; Observation of two DLTS peak; Merger of two subbands with low electron concentration into the adjacent DLTS peak.


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