Photoluminescence and passivation of silicon nanostructures

Redman, D.A.; Follstaedt, D.M.
November 1994
Applied Physics Letters;11/7/1994, Vol. 65 Issue 19, p2386
Academic Journal
Demonstrates the use of a method to fabricate nanometer-scale structures in silicon for photoluminescence studies. Implantation of helium ions to form a dense subsurface layer of small cavities; Failure of the implanted specimens to yield detectable photoluminescence; Production of a blueshift relative to anodization.


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