TITLE

Effect of excess Zn around the active-stripe mesa on the lasing threshold current of a [011]

AUTHOR(S)
Chu, S.N.G.; Logan, R.A.
PUB. DATE
November 1994
SOURCE
Applied Physics Letters;11/7/1994, Vol. 65 Issue 19, p2377
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the effect of excess zinc (Zn) around the active-stripe mesa on the lasing threshold current of a [011] oriented InGaAs/InP buried-heterostructure. Confirmation of the poor device performance; Factor affecting the localized enhancement of the Zn level in the first p-InP layer; Diffusion of excess Zn across the sidewall interfaces.
ACCESSION #
4221633

 

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