TITLE

Oxidation of silicon nitride prepared by plasma-enhanced chemical vapor deposition at low

AUTHOR(S)
Wen-Shiang Liao; Chi-Huei Lin
PUB. DATE
October 1994
SOURCE
Applied Physics Letters;10/24/1994, Vol. 65 Issue 17, p2229
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Demonstrates the fabrication of hydrogenated amorphous silicon nitride films (a-SiN[sub x]:H) by plasma-enhanced chemical vapor deposition at low temperature. Oxidation of the a-SiN[sub x]:H films upon the exposition of the samples to the atmosphere; Use of infrared absorption spectroscopy to monitor the oxidation processes.
ACCESSION #
4221631

 

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