Bandwidth enhanced metal-semiconductor-metal photodetectors based on backgated ip structures

Greger, E.; Reingruber, K.
October 1994
Applied Physics Letters;10/24/1994, Vol. 65 Issue 17, p2223
Academic Journal
Presents the bandwidth enhanced metal-semiconductor-metal photodetectors based on back-gated ip structures. Capacity of the backgate to allow extremely short sweep-out times for the holes; Avoidance of long tails due to slow moving holes and screening of the external drift fields; Display of reduction of the bandwidth by the high frequency performance.


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