Determination of the GaN/AlN band offset via the (-/0) acceptor level of iron

Baur, J.; Maier, K.
October 1994
Applied Physics Letters;10/24/1994, Vol. 65 Issue 17, p2211
Academic Journal
Determines the conduction-band offset in aluminum nitride (AlN) gallium nitride (GaN) heterojunctions. Observation of a characteristic infrared luminescence spectrum on AlN polycrystalline material; Assignment of the spectrum to the spin-forbidden internal 3d--3d transition; Location of the acceptor level of iron in AlN; Value for iron in GaN.


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