Observation of sulfur-terminated GaAs(001)-(2X6) reconstruction by scanning tunneling microscopy
Related Articles
- Scanning tunneling microscopy of the atomic structure of the GaAs (110) surface at reduced tip.... Heinrich, A.J.; Wenderoth, M. // Applied Physics Letters;1/27/1997, Vol. 70 Issue 4, p449
Examines the gallium arsenide (110) surface at small tip-sample distances using a scanning tunneling microscope. Revelation of corrugation maxima on the arsenic and gallium surface sites; Difference of the dual atom images from the simultaneously measured filled-state images; Interpretation of...
- In situ scanning tunneling microscopy of GaAs(001), (111)A, and (111)B surfaces in sulfuric acid.... Hideki Yao; Shueh-Lin Yau // Applied Physics Letters;3/11/1996, Vol. 68 Issue 11, p1473
Presents in situ electrochemical scanning tunneling microscopy (STM) of GaAs(001), (111)A, and (111)B surfaces in sulfuric acid solution. Effectiveness of cathodic polarization of GaAs electrodes; Acquisition of STM images with atomic resolution; Observation of atomically-flat terrace-step...
- Semiconductor topography in aqueous environments: Tunneling microscopy of chemomechanically polished (001) GaAs. Sonnenfeld, Richard; Schneir, J.; Drake, B.; Hansma, P. K.; Aspnes, D. E. // Applied Physics Letters;6/15/1987, Vol. 50 Issue 24, p1742
Scanning tunneling microscopy (STM) of (001) GaAs samples immersed in aqueous solutions has been used to assess the effectiveness of a standard bromine-methanol chemomechanical polish to produce flat surfaces over length scales from 5 to 1000 nm. The STM images reveal irregular 100-nm features...
- Scanning tunneling microscopy study of GaAs(001) surface prepared by deoxygenated and de-ionized.... Hirota, Y.; Fukuda, T. // Applied Physics Letters;5/22/1995, Vol. 66 Issue 21, p2837
Describes the scanning tunneling microscopy images of gallium arsenide (GaAs) (001) surface prepared by deoxygenated and de-ionized water (DODIW) treatment. Electrochemical reaction between DODIW and GaAs surface; Appearance of the missing-dimer rows and unit cells following ultrahigh vacuum...
- P[sub 2]S[sub 5] passivation of GaAs surfaces for scanning tunneling microscopy in air. Dagata, J.A.; Tseng, W.; Bennett, J.; Schneir, J.; Harary, H.H. // Applied Physics Letters;12/16/1991, Vol. 59 Issue 25, p3288
Presents a method for preparing GaAs substrate. Determination of surface quality by scanning tunneling microscopy (STM); Demonstration of the P[sub 2]S[sub 5] passivation method by x-ray photoelectron spectroscopy; Use of STM under ambient conditions in investigating surfaces.
- Scanning tunneling microscopy of step bunching on vicinal GaAs(100) annealed at high temperatures. Skala, S.L.; Chou, S.T. // Applied Physics Letters;8/8/1994, Vol. 65 Issue 6, p722
Examines the step bunching and terrace widening on gallium arsenide annealed at high temperatures. Application of scanning tunneling microscopy; Composition of the resulting surface; Increase in average terrace widths; Explanation of the observed step bunching.
- Defect-assisted tunneling current: A revised interpretation of scanning tunneling spectroscopy measurements. Grandidier, B.; de la Broise, X.; StiƩvenard, D.; Delerue, C.; Lannoo, M.; Stellmacher, M.; Bourgoin, J. // Applied Physics Letters;5/22/2000, Vol. 76 Issue 21
Scanning tunneling microscopy (STM) is used to study low temperature grown GaAs layers. Excess As gives rise to a high concentration of As antisites (As[sub Ga]). On these point defects, tunneling spectroscopy reveals a band of donor states. In fact, the measured tunneling current results from a...
- Scanning tunneling microscopy on photoconductive semi-insulating GaAs. van de Walle, G. F. A.; van Kempen, H.; Wyder, P.; Davidsson, P. // Applied Physics Letters;1/5/1987, Vol. 50 Issue 1, p22
The increase in surface conductivity upon illumination of semi-insulating GaAs was used to enable surface-topography measurements with a scanning tunneling microscope (STM). Images were recorded in ultrahigh vacuum and in air using a HeNe laser and a halogen lamp for the generation of a...
- GaAs pn junction studied by scanning tunneling potentiometry. Muralt, P. // Applied Physics Letters;11/24/1986, Vol. 49 Issue 21, p1441
The potential distribution across the cleaved end face of a forward-biased GaAs pn junction was simultaneously mapped with its surface topography. The space-charge region along the interface is clearly visible at zero bias or small forward bias voltages.